Engineering charge tunable one dimensional molecular array towards supercritical collapse states in graphene

ORAL

Abstract

The ability to modify the electronic properties of monolayer graphene via molecular control creates new opportunities for fabricating nanoscale hybrid devices. Understanding the charge transfer properties and resulting electronic behavior of molecule/graphene interfaces is essential for tuning the electronic and magnetic characteristics of these hybrid devices. By controlling charged impurities through molecular self-assembly on a gated graphene device, we can switch the charge state of the molecule and engineer the wave function of relativistic electrons in graphene. Scanning tunneling spectroscopy is used to locally probe the electronic structure of graphene and the molecular nanostructures. Molecular self-assembly is controlled by the molecular coverage and edge-templated self-assembly in UHV condition. Relativistic electrons on graphene undergo a transition from subcritical to a supercritical regime as the packing density of the charged molecule array is increased. We found that one-dimensional supercritical states emerge in graphene when we tune the molecular array below the critical spacing.

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Presenters

  • Hsin-Zon Tsai

    Physics, Univ of California - Berkeley, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley

Authors

  • Hsin-Zon Tsai

    Physics, Univ of California - Berkeley, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley

  • Jiong Lu

    Chemistry, National University of Singapore, Department of Chemistry, National University of Singapore

  • Alpin Tatan

    Department of Physics, National University of Singapore

  • Sebastian Wickenburg

    Department of physics, University of California - Berkeley

  • Arash Alahgholipour Omrani

    Department of physics, University of California - Berkeley

  • Johannes Lischner

    Materials, Imperial College London, Physics, Imperial College London, Department of Materials, Imperial College London, Departments of Physics and Materials, and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

  • Takashi Taniguchi

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

  • Alex Zettl

    Physics, University of California, Berkeley, Physics, Univ of California - Berkeley, Department of physics, University of California - Berkeley, Physics, University of California at Berkeley

  • Antonio Helio Castro Neto

    Physics, National University of Singapore, Centre for Advanced 2D Materials and Graphene Research Centre, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore

  • Steven Louie

    Physics, University of California, Berkeley, University of California, Berkeley, Physics, Univ of California - Berkeley, Univ of California - Berkeley, Physics, UC Berkeley, Physics Department, UC Berkeley and Lawrence Berkeley National Lab, Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Department of Physics, University of California, Berkeley, Physics Department, University of California Berkeley and Lawrence Berkeley National Lab, Department of physics, University of California - Berkeley, Lawrence Berkeley National Lab and University of California - Berkeley, Materials Sciences Division, Lawrence Berkeley National Laboratory & Department of Physics, University of California at Berkeley, UC Berkeley and Lawrence Berkeley National Lab, Physics, University of California - Berkeley

  • Vitor Pereira

    Physics, National University of Singapore, Department of Physics, National University of Singapore, Centre for Advanced 2D Materials, National University of Singapore

  • Michael Crommie

    Physics, Univ of California - Berkeley, UC Berkeley and LBNL, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley, Physics, University of California - Berkeley