Electronic Properties of Defects in Few-Layer MoS2 Films

ORAL

Abstract

We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain quantitative measurements of the local density of states, work function and nature and mobility of defects. These defects include point defects such as S and Mo vacancies as well as extended defects such as film edges and grain boundaries.

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Presenters

  • Marcus Forst

    Physics Department, Temple University

Authors

  • Marcus Forst

    Physics Department, Temple University

  • Daniel Trainer

    Physics Department, Temple University

  • Marian Precner

    Physics Department, Drexel University

  • Tomas Polakovic

    Physics Division, Argonne National Laboratory, Materials Science Division, Argonne National Laboratory, Physics Department, Drexel University

  • Qiao Qiao

    Condensed Matter Physics & Materials Science Department, Brookhaven National Laboratory

  • Yimei Zhu

    Condensed Matter Physcis and Materials Science Departement, Brookhaven National Laboratory, Brookhaven National Laboratory, Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Brookhaven Natl Lab, Brookhaven National Lab, Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Condensed Matter Physics & Materials Science Department, Brookhaven National Laboratory

  • Xiaoxing Xi

    Physics Department, Temple University, Physics, Temple University

  • Goran Karapetrov

    Department of Physics, Drexel University, Physics Department, Drexel University

  • Maria Iavarone

    Physics Department, Temple University, Physics, Temple University