Emerging exchange bias and magnetic coupled layer at molecular interface

Exchange bias (EB) effect is one of the integral part in spintronics which describes a magnetic coupling at the interface between a ferromagnetic (FM) and an antiferromagnetic material (AFM). Recently, this effect has been received great attention in a logical memory device by acting as 'effective magnetic field' without external magnetic field. In this report, we realize the EB effect at the interface between small molecule and ferromagnetic metal thin film system. Electrical transport and SQUID-VSM analyses show a clear EB and further newly developed exchange coupled layer at the organic/inorganic interface, giving us opportunity to realize new functionalities by tuning the unique interface. Several spectroscopy data support the phenomenon in detail and shed light on the origin of the interfacial EB in the system. This research will be the foundation of a tunable organic/inorganic device in spintronics without external magnetic field.