V_Si based vector-magnetometry in 4H-Silicon Carbide - status quo and future

Silicon Carbide (SiC) as an emerging quantum host material provides many defects for quantum applications. The electronic properties and mature industrial background make it especially attractive for integration of quantum sensing systems. We demonstrate the theory of sensing of all 3D-Vector components of external magnetic fields using spin 3/2 systems and show practical data using silicon vacancies in 4H-SiC. The dim fluoresence of silicon vacancies and lower spin contrast compared to diamond based approaches decrease sensitivity using similar to already known techniques. We here also present ideas and approaches currently under investigation on how to overcome these problems in silicon carbide by exploiting its electrical and manufacturing advantages and combining different fields of modern material science with spin defects in solid state materials.