FABRICATION AND CHARACTERIZATION OF TIN FILMS FOR APPLICATIONS IN NANO-AND BIOLOGICAL SCIENCE AND ENGINEERING

Titanium nitride (TiN) thin films have been grown on existing and emerging implant materials surfaces using a pulsed laser deposition method. The selection of titanium nitride was made due to its stellar properties of high melting point, good diffusion barrier, high hardness and good electrical conductivity, and scattered reports in the literature about its biocompatibility. The effect of substrate orientation, partial pressure of nitrogen gas, deposition temperature and background gas on nanowire growth has been examined in this study. TiN films are expected to play important roles in the fabrication of new electronic and biological devices or fabrication of existing devices with improved characteristics.