The Origin of Localization in Ti-Doped Silicon

ORAL

Abstract

Intermediate band semiconductors hold the promise to significantly improve the efficiency of solar cells, but only if the impurity band is metallic. We apply our recently developed first principles method [1-4] to investigate the nature of localization in Ti-doped Si, a promising candidate for intermediate band solar cells. Our results show that, contrary to common belief, Anderson localization plays a more important role than Mott localization in the metal-insulator transition. Implications for the theory of intermediate band solar cells will be discussed.

[1] T. Berlijn, D. Volja, and W. Ku PRL 106, 077005 (2011)
[2] C. E. Ekuma, H. Terletska, K.-M. Tam, Z.-Y. Meng, J. Moreno, and M. Jarrell, PRB 89, 081107 (2014)
[3] Y. Zhang, H. Terletska, C. Moore, C. Ekuma, K.-M. Tam, T. Berlijn, W. Ku, J. Moreno, and M. Jarrell, PRB 92, 205111 (2015)
[4] Y. Zhang, R. Nelson, E. Siddiqui, K-M Tam, U. Yu, T. Berlijn, W. Ku, NS Vidhyadhiraja, J. Moreno, and M Jarrell, PRB 94, 224208 (2016)

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Presenters

  • Yi Zhang

    Louisiana State Univ

Authors

  • Yi Zhang

    Louisiana State Univ

  • Ryky Nelson

    Institute of Inorganic Chemistry, RWTH Aachen University

  • Ka-Ming Tam

    Louisiana State Univ, Physics & Astronomy, Louisiana State University

  • Tom Berlijn

    Oak Ridge National Lab, Center for Nanophase Materials Sciences, Oak Ridge National Lab, CNMS, Oak Ridge National Lab, Oak Ridge National Laboratory

  • Wei Ku

    Tsung-Dao Lee Institute, Shanghai Jiao Tong Univ, Shanghai Jiao Tong University

  • Un jong Yu

    Department of Physics and Photon Science, GIST

  • N S Vidhyadhiraja

    Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research

  • Juana Moreno

    Louisiana State Univ

  • Mark Jarrell

    Louisiana State Univ, Physics & Astronomy, Louisiana State University