Electronic structure of epitaxially-grown monolayer 1T’-MoTe2

ORAL

Abstract

We have investigated the electronic structure of monolayer 1T’-MoTe2 grown by molecular beam epitaxy on bilayer graphene substrate. Angle-resolved photoemission measurements found the spin-orbit-coupling induced breaking of the band degeneracy points between the valence and conduction bands. The strength of spin-orbit-coupling is found to be insufficient to open a band gap, which makes monolayer 1T’-MoTe2 on bilayer graphene a semimetal.

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Presenters

  • Sung-Kwan Mo

    Lawrence Berkeley National Lab, Lawrence Berkeley Natl Lab, Lawrence Berkeley National Laboratory, Pohang Accelerator Laboratory, Advanced Light Source, Lawrence Berkeley National Laboratory

Authors

  • Sung-Kwan Mo

    Lawrence Berkeley National Lab, Lawrence Berkeley Natl Lab, Lawrence Berkeley National Laboratory, Pohang Accelerator Laboratory, Advanced Light Source, Lawrence Berkeley National Laboratory

  • Shujie Tang

    Stanford University, Lawrence Berkeley National Laboratory, SIMIS, Stanford University

  • Chaofan Zhang

    SIMIS, Stanford University, Stanford University

  • Chunjing Jia

    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, SLAC National Accelerator Laboratory, SIMIS, Stanford University, SLAC - Natl Accelerator Lab, Stanford University, Stanford Univ

  • Thomas Devereaux

    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Stanford Univ, SLAC and Stanford University, SLAC National Accelerator Laboratory, SLAC - Natl Accelerator Lab, Stanford Institute for Materials and Energy Sciences, SLAC National Laboratory, Stanford University, SIMIS, Stanford University, Physics, Stanford University, SLAC National Lab and Stanford University, SIMES, SLAC and Stanford University

  • Zhi-Xun Shen

    Stanford University, SLAC National Accelerator Laboratory, SLAC - Natl Accelerator Lab, Stanford Univ, SIMIS, Stanford University, Applied Physics, Stanford Univ, Stanford University and SLAC National Accelerator Laboratory, Applied Physics, Stanford University

  • Hyejin Ryu

    Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Lawrence Berkeley Natl Lab

  • Choongyu Hwang

    Pusan National University, Pusan Natl Univ

  • Makoto Hashimoto

    SLAC, SLAC, Stanford University, SLAC National Laboratory, Stanford University, SLAC - Natl Accelerator Lab, SLAC National Accelerator Laboratory, SSRL, SLAC

  • Donghui Lu

    SSRL/SLAC, SLAC, SLAC, Stanford University, SLAC National Laboratory, Stanford University, SLAC - Natl Accelerator Lab, SLAC National Accelerator Laboratory, SSRL, SLAC

  • Zhi Liu

    Shanghai Institute of Microsystem and Information Technology, SIMIT,CAS, SIMIT