Substrate Effects of TiSe2 Thin Film on TiO2

ORAL

Abstract

TiSe2 is a layered material in the family of Transition Metal Dichalcogenide, and bulk TiSe2 single crystal undegoes a Charge Density Wave transition at temperature below ~200 K. In this talk, I will talk about growth and analysis of TiSe2 thin films on TiO2 rutile substrates, and discuss the substrate effect on the electronic band structure and transport properties of TiSe2. A comparison between TiSe2 films on TiO2 and TiSe2 films on bilayer graphene will also be given.

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Presenters

  • Tao Jia

    Stanford University

Authors

  • Tao Jia

    Stanford University

  • Slavko Rebec

    Stanford University

  • Kejun Xu

    Stanford University and SLAC National Accelerator Laboratory, Stanford University, Applied Physics, Stanford University

  • Hafiz Sohail

    Stanford University

  • Shujie Tang

    Stanford University, Lawrence Berkeley National Laboratory, SIMIS, Stanford University

  • Makoto Hashimoto

    SLAC, SLAC, Stanford University, SLAC National Laboratory, Stanford University, SLAC - Natl Accelerator Lab, SLAC National Accelerator Laboratory, SSRL, SLAC

  • Donghui Lu

    SSRL/SLAC, SLAC, SLAC, Stanford University, SLAC National Laboratory, Stanford University, SLAC - Natl Accelerator Lab, SLAC National Accelerator Laboratory, SSRL, SLAC

  • Robert Moore

    Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, SLAC, SLAC, Stanford University

  • Zhi-Xun Shen

    Stanford University, SLAC National Accelerator Laboratory, SLAC - Natl Accelerator Lab, Stanford Univ, SIMIS, Stanford University, Applied Physics, Stanford Univ, Stanford University and SLAC National Accelerator Laboratory, Applied Physics, Stanford University