Conversion between spin and charge currents by Rashba or Topological Insulator interfaces and perspective for low power spintronic devices

The locking between spin and momentum degrees of freedom in the 2D states of topological insulator (TI) and Rashba interfaces opens interesting perspectives for the conversion between charge and spin currents [1], which, parenthetically, is the basic function for the creation or detection of spin currents in any spintronic devices.
I will present experimental results, mainly at room temperature, on the spin/charge conversion by the Edelstein or Inverse Edelstein Effects (EE and IEE) at Rashba interfaces, interfaces between oxides (LAO/STO) and with TI (essentially with the recently discovered alpha-Sn TI). Edelstein magnetoresistance (MR) effects, with the same symmetry as the S-MR, can also be obtained. As I will show, the conversion between spin and charge currents at room temperature by EE or IEE can be much more efficient than conversions by the SHE of heavy metals in devices such as, for example, SOT-RAMs or heat-electricity converters.
[1] Recent review by A. Soumyanarayanan, N. Reyren, A. Fert and C. Panagopoulos, Nature 539, 509 (2016).