Spatial Control of Charge Doping in van der Waals Heterostructures

ORAL

Abstract

Advancements in designing innovative electronic devices and exploring novel physics are often limited by the spatial control of charge doping in 2D materials. A variety of conventional techniques, such as electrostatic gating, are used to achieve charge doping control but suffer from complicated fabrication processes that introduce impurities and lack flexibility. To overcome these challenges, we have introduced new methods of patterning doping profiles in van der Waals heterostructures by controllably exciting defect states in our device with light illumination and local field excitation. In this study we create rewritable nanoscale doping patterns with improved spatial control. These spatially dependent doping patterns are then characterized through local probe and transport methods. This local patterning technique will enable novel device designs and allow for the exploration of patterned superlattice structures in 2D materials.

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Presenters

  • Salman Kahn

    Univ of California - Berkeley, UCB, Physics, University of California, Berkeley

Authors

  • Salman Kahn

    Univ of California - Berkeley, UCB, Physics, University of California, Berkeley

  • Wu Shi

    Lawrence Berkeley National Laboratory, Physics, University of California, Berkeley, Univ of California - Berkeley

  • Sheng-Yu Wang

    UC Berkeley, Physics, University of California, Berkeley

  • Hsin-Zon Tsai

    Physics, Univ of California - Berkeley, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley

  • Dillon Wong

    Princeton University, Joseph Henry Laboratories & Department of Physics, Princeton University, UCB, Physics, Princeton University, Univ of California - Berkeley

  • Takashi Taniguchi

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

  • Alex Zettl

    UC Berkeley and LBNL, UC berkeley, Univ of California - Berkeley, Physics, UC Berkeley, Physics, University of California, Berkeley, University of California at Berkeley, Physics, University of California - Berkeley, Department of Physics, Univ of California - Berkeley

  • Michael Crommie

    Physics, Univ of California - Berkeley, UC Berkeley and LBNL, Univ of California - Berkeley, UCB, Physics, UC Berkeley, Physics, University of California, Berkeley, Department of physics, University of California - Berkeley, Physics, University of California - Berkeley