Performance of Solution-Processed Carbon Nanotube Field Effect Transistors using Graphene Electrodes

Carbon nanotube field effect transistors (CNTFETs) are considered to be the strong contenders to replace Si in future nanoelectronics because of their excellent electronic, mechanical and thermal properties. In this work we assess the performance of both p-type and n-type CNTFETs using few layer graphene as the contact electrode material. We have performed temperature dependent I–V measurements and the Schottky barrier height at CNT–graphene junction has been extracted. The calculated barrier height at CNT–graphene junction is close to zero for both p-CNTFETs and n-CNTFETs. This signifies the Ohmic contact of graphene with both valence and conduction bands of CNTs and that graphene can provide low barrier contact for both hole and electron transport in CNTFETs. In addition, we observe that there is no correlation between the thickness of graphene and the barrier height estimated. Our work demonstrates the suitability of graphene as contact electrode material for Complementary logic circuits based on CNTFETs.