Simulations of atomic force microscopy image “flickering” on a doped Si (111) 7x7 surface using real-space pseudopotential calculations.
ORAL
Abstract
Recently a “flickering” phenomena has been reported using atomic force microscopy (AFM) imaging applied to a heavily B doped Si (111) 7x7. The flickering corresponds to a brightening and dimming image of the Si adatoms as the AFM tip height is changed. We employ real-space pseudopotential-density functional theory calculations to address this phenomenon. We consider stable structures of B doped Si structures with and without a CO-functionalized AFM tip. We find a bistable configuration of the B doped Si system with the presence of CO tip, which may account for the observed image changes.
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Presenters
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Dingxin Fan
Univ of Texas, Austin
Authors
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Dingxin Fan
Univ of Texas, Austin
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James Chelikowsky
Univ of Texas, Austin, The University of Texas at Austin, University of Texas, Austin, University of Texas at Austin, University of Texas
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Daniel Meuer
University of Regensburg
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Franz Giessibl
University of Regensburg