Room-temperature Telecommunication Wavelength Lasing from GaN Multiple-quantum Wells

Near-infrared (NIR) semiconductor nanolasers have been attracting much attention for large-scale optoelectronic integration. Notwithstanding significant progress in III-V nanolaser in the NIR region at room-temperature, there are still relentless efforts to overcome low quantum efficiency and Auger process. Er-doped GaN multiple-quantum wells enable emitting strongly at technologically important wavelength of 1.5 micron which falls in minimum loss window of optical fibers and in the eye-safe wavelength region. Here, we report the realization of room-temperature stimulated emission at 1.5 micron wavelength regime from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in these nanostructures. The emission intensity from our Er-doped GaN multiple-quantum wells increases significantly in comparison to that of a single layer. Achieving hybrid GaN-Si lasers opens up a new pathway towards full on-chip integration.