Topological phase transition in non-centrosymmetric semiconductor Te under pressure
ORAL
Abstract
In this presentation, we report the transport properties of Te under pressure. Magnetoresistance shows Shubnikov-de Haas oscillations at low temperature. By applying the hydrostatic pressure, oscillation period changes, reflecting the pressure-induced band deformation. We discuss the possibilities of Lifshitz transition (change of Fermi surface topology originating from the characteristic band evolution) and topological phase transition under high pressure.
[1] T. Furukawa et al., Nat. Commun. 8, 954 (2017)
[2] M. Hirayama et al. Phys. Rev. Lett. 114, 206401 (2015).
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Presenters
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Toshiya Ideue
The University of Tokyo, the University of Tokyo, the Univ. of Tokyo, Univ. of Tokyo
Authors
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Toshiya Ideue
The University of Tokyo, the University of Tokyo, the Univ. of Tokyo, Univ. of Tokyo
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Motoaki Hirayama
Center for Emergent Matter Science, RIKEN, RIKEN Center for Emergent Matter Science, RIKEN, RIKEN Center for Emergent Mattar Science, CEMS, RIKEN
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Hiroaki Taiko
the University of Tokyo
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Takanari Takahashi
Tokyo Institute of Technology
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Masayasu Murase
Tokyo Institute of Technology
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Takashi Miyake
National Institute of Advanced Industrial Science and Technology (AIST), AIST, National Institute of Advanced Industrial Science and Technology
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Shuichi Murakami
Tokyo Institute of Technology, Department of Physics, Tokyo Institute of Technology, Tokyo Inst of Tech - Tokyo, Physics, Tokyo Inst of Tech, Physics, Tokyo Inst. of Tech.
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Takao Sasagawa
MSL, Tokyo Inst of Tech, Tokyo Institute of Tech., Tokyo Institute of Technology, Laboratory for Materials and Structures, Tokyo Inst of Tech, Tokyo Inst. of Tech., Materials and Structures Laboratory, Tokyo institute of Technology
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Yoshihiro Iwasa
Univ of Tokyo, Department of Applied Physics, The University of Tokyo, The University of Tokyo, University of Tokyo, The Univ. of Tokyo, the University of Tokyo, the Univ. of Tokyo, Univ. of Tokyo