Volatile resistive memory and dynamics of VOX nanodevices

ORAL

Abstract

VO2 and V2O3 are two classical examples of strongly electron-correlated materials, showing an Insulator-Metal transition (IMT) at 340 K and 160 K respectively. The possibility to induce the IMT using electric current or voltage has made them attractive for applications in emerging technologies such as RRAM memories or neuromorphic computing. We have studied the dynamics of the IMT in VOX nanodevices using fast voltage pulses. We found that above a threshold voltage (Vth), the IMT is induced within a few nanoseconds, after which the device returns to the insulating state in less than 10 ns. Interestingly, the system retains a “memory” of the event that persists much longer, during which it is possible to trigger the IMT with voltages well below Vth. This effect opens the possibility for a new kind of volatile memory, and it could have important implications for the implementation of IMT-based neuristors or RRAMs.

–

Presenters

  • Javier Del Valle Granda

    Department of Physics, Univ of California - San Diego, Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego, Department of Physics and Center for Advance Nanoscience, University of California San Diego, Physics Department and Center for Advanced Nanoscience, University of California San Diego

Authors

  • Javier Del Valle Granda

    Department of Physics, Univ of California - San Diego, Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego, Department of Physics and Center for Advance Nanoscience, University of California San Diego, Physics Department and Center for Advanced Nanoscience, University of California San Diego

  • Pavel Salev

    Univ of Tulsa, Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego

  • Juan Trastoy

    Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego, Physics Department and Center for Advanced Nanoscience, University of California San Diego

  • Yoav Kalcheim

    Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego, Department of Physics and Center for Advance Nanoscience, University of California San Diego, Physics Department and Center for Advanced Nanoscience, University of California San Diego

  • Ilya Valmianski

    Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego, UC San Diego

  • Juan Ramirez

    Physics, Univ de Los Andes, Departamento de Física, Universidad de Los Andes, Univ de Los Andes

  • Marcelo Rozenberg

    Laboratoire de Physique des Solides, CNRS/Universite Paris-Sud, Laboratoire de Physique des Solides, Université Paris-Sud

  • Ivan Schuller

    Department of Physics, Univ of California - San Diego, University of California, San Diego, Department of Physics and Center for Advanced Nanoscience, Univ of California - San Diego, UC San Diego, Department of Physics and Center for Advance Nanoscience, University of California San Diego, Physics Department and Center for Advanced Nanoscience, University of California San Diego, Univ of California - San Diego, Physics, University of California, San Diego