The fabrication and the characterization of all inorganic perovskite solar cell with metal oxide charge transport layer
ORAL
Abstract
Perovskite material have been the focus of researchers for the past few years in photovoltaic applications due to their properties that allow higher power conversion efficiency. Instability and high degradation rate are among the challenges that still face the organic types of perovskite. On the other hand, inorganic perovskites such as cesium lead halide and cesium tin halide have higher stability, but they produce less power conversion efficiency in solar cells.
An inorganic solar cell was fabricated using CsPbBr3 as the active layer, NiO and ZnO nanocrystals as the hole and electron transport layer respectively. All the material were synthesized using sol-gel route and were characterized using micro-photoluminescence, absorbance spectroscopy, Raman spectroscopy and x-ray diffraction, while the deposition of the material was performed using spin-coting method. PL measurement of CsPbBr3 exhibits a sharp peak located at 523 nm while the absorbance spectrum indicate an edge at 518 nm.
The electrodes of the device were 100 nm of silver deposited by E-beam evaporator and a commercial FTO slide on a glass substrate. Keithley SCS 4200 semiconductor characterization was used to obtain the current voltage characteristics and the quantum efficiency was calculated using Oriel IQE 200.
An inorganic solar cell was fabricated using CsPbBr3 as the active layer, NiO and ZnO nanocrystals as the hole and electron transport layer respectively. All the material were synthesized using sol-gel route and were characterized using micro-photoluminescence, absorbance spectroscopy, Raman spectroscopy and x-ray diffraction, while the deposition of the material was performed using spin-coting method. PL measurement of CsPbBr3 exhibits a sharp peak located at 523 nm while the absorbance spectrum indicate an edge at 518 nm.
The electrodes of the device were 100 nm of silver deposited by E-beam evaporator and a commercial FTO slide on a glass substrate. Keithley SCS 4200 semiconductor characterization was used to obtain the current voltage characteristics and the quantum efficiency was calculated using Oriel IQE 200.
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Presenters
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Haider Salman
University of Arkansas
Authors
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Haider Salman
University of Arkansas
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Omar Manasreh
Department of Electrical engineering, University of Arkansas, University of Arkansas, Electrical Engineering department , University of Arkansas