Magnetic Semiconductors: Materials and Properties
FOCUS · K21
Presentations
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Control of Magnetic Properties of (Ga,Mn)As and GaAs-Compatible Ferromagnetic Heterostructures
Invited
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Presenters
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Jianhua Zhao
Institute of Semiconductors, Chinese Academy of Sciences
Authors
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Jianhua Zhao
Institute of Semiconductors, Chinese Academy of Sciences
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Coherent Acoustic Phonon Generation in Ferromagnetic GaMnAs Films
ORAL
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Presenters
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Brenden Magill
Physics, Virginia Institute of Technology, Virginia Tech
Authors
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Brenden Magill
Physics, Virginia Institute of Technology, Virginia Tech
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Giti Khodaparast
Physics, Virginia Institute of Technology, Virginia Tech
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Gary Sanders
University of Florida
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Christopher Stanton
Univ of Florida - Gainesville, Physics, Univ of Florida - Gainesville, University of Florida
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Joshua Holleman
National High Magnetic Field Laboratory
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Stephen McGill
National High Magnetic Field Lab, NHMFL, Florida State University, 1800 E. Paul Dirac Drive, National High Magnetic Field Laboratory, Natl High Magnetic Field Lab, National High Magnetic Field Laboratory
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Hiro Munekata
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Effects on Ferromagnetic Properties of GaMnAs Induced by Proximity of Topological Insulator Bi<sub>2</sub>Se<sub>3</sub>
ORAL
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Presenters
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Seul-Ki Bac
Korea University
Authors
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Seul-Ki Bac
Korea University
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Hakjoon Lee
Korea University
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Sangyeop Lee
Korea University
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Seonghoon Choi
Korea University
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Sanghoon Lee
Korea University
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Xinyu Liu
University of Notre Dame
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Malgorzata Dobrowolska
University of Notre Dame
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J Furdyna
University of Notre Dame
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Evidence for Magnetic Polarons in EuB<sub>6</sub> from Small Angle Neutron Scattering
ORAL
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Presenters
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Gabrielle Beaudin
Univ. of Montreal
Authors
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Gabrielle Beaudin
Univ. of Montreal
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Andrea Bianchi
Univ. of Montreal, Département de Physique, Université de Montréal
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Alexandre Désilets-Benoit
Univ. of Montreal
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Mark Laver
University of Birmingham, Birmingham University
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Robert Arnold
University of Birmingham
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Stravos Samothrakitis
University of Birmingham
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Michel Kenzelmann
Paul Scherrer Institute
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Simon Gerber
Paul Scherrer Institute
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Jorge Gavilano
Paul Scherrer Institute, Paul Scherrer Institue
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Charles Dewhust
Institut Laue Langevin
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Robert Cubitt
Institut Laue Langevin
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Light Switching of the Ferromagnetic Phase in the Magnetic Semiconductor EuSe
ORAL
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Presenters
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Andre Henriques
Insituto de Fisica, Unversidade de Sao Paulo
Authors
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Andre Henriques
Insituto de Fisica, Unversidade de Sao Paulo
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Pavel Usachev
Insituto de Fisica, Unversidade de Sao Paulo
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Alexander Naupa
Insituto de Fisica, Unversidade de Sao Paulo
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Xavier Gratens
Insituto de Fisica, Unversidade de Sao Paulo
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Valmir Chitta
Insituto de Fisica, Unversidade de Sao Paulo
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Gunther Springholz
Johannes Kepler Institute, Johannes Kepler Universität, Institut für Halbleiter und Festkörperphysik, Johannes Kepler University
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Microscopic origin of ferromagnetism in Fe-doped III-V semiconductors
ORAL
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Presenters
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Hiroshi Katayama-Yoshida
CSRN, The University of Tokyo, CSRN, The university of Tokyo
Authors
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Hikari Shinya
Graduate School of Engineering, YNU, Graduate School of Engineering, Yokohama National University
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Tetsuya Fukushima
Institute for NanoScience Design, Osaka University
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Akira Masago
CSRN, Osaka University
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Kazunori Sato
Graduate School of Engineering, Osaka University
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Hiroshi Katayama-Yoshida
CSRN, The University of Tokyo, CSRN, The university of Tokyo
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The origin of ferromagnetism in transition-metal doped Ge by the first principles calculations
ORAL
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Presenters
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Hikari Shinya
Graduate School of Engineering, Yokohama National Univ
Authors
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Hikari Shinya
Graduate School of Engineering, Yokohama National Univ
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Tetsuya Fukushima
INSD, Osaka University, Institute for NanoScience Design, Osaka University
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Akira Masago
CSRN, Osaka University
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Kazunori Sato
Graduate School of Engineering, Osaka University
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Hiroshi Katayama-Yoshida
CSRN, The University of Tokyo, CSRN, The university of Tokyo
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Stepping stone mechanism: carrier-free long range magnetism mediated by magnetized cation states
ORAL
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Presenters
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Junyi Zhu
Physics, Chinese Univ of Hong Kong, Chinese Univ of Hong Kong, Chinese Univ. of Hong Kong
Authors
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Chunkai Chan
Chinese Univ. of Hong Kong
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Xiaodong Zhang
Chinese Univ. of Hong Kong
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Yiou Zhang
Physics, Chinese Univ of Hong Kong, Chinese Univ. of Hong Kong
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Kin Fai Tse
Chinese Univ. of Hong Kong
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Bei Deng
Chinese Univ. of Hong Kong
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Jingzhao Zhang
Physics, Chinese Univ of Hong Kong, Chinese Univ of Hong Kong, Chinese Univ. of Hong Kong
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Junyi Zhu
Physics, Chinese Univ of Hong Kong, Chinese Univ of Hong Kong, Chinese Univ. of Hong Kong
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Magnetism of Magnetic Impurity Doped GaN Modulated by Spinodal Decomposition
ORAL
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Presenters
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Akira Masago
CSRN, Osaka University
Authors
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Akira Masago
CSRN, Osaka University
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Hikari Shinya
Graduate School of Engineering, YNU, Graduate School of Engineering, Yokohama National University
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Tetsuya Fukushima
INSD, Osaka University, Institute for NanoScience Design, Osaka University
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Kazunori Sato
Graduate School of Engineering, Osaka University
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Hiroshi Katayama-Yoshida
CSRN, The University of Tokyo, CSRN, The university of Tokyo
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Single Crystal Growth and Propertis Study of Diluted Magnetic Semicondutor (Ba,K)(Zn,Mn)<sub>2</sub>As<sub>2 </sub>& (Ba,Na)(Zn,Mn)<sub>2</sub>As<sub>2</sub>
ORAL
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Presenters
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Guoqiang ZHAO
Institute of Physics, Chinese Academy of Sciences
Authors
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Guoqiang ZHAO
Institute of Physics, Chinese Academy of Sciences
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Interplay of carrier free and carrier mediated magnetism in Mn doped LiZnAs
ORAL
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Presenters
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Xiaodong Zhang
Chinese Univ of Hong Kong
Authors
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Xiaodong Zhang
Chinese Univ of Hong Kong
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Jingzhao Zhang
Physics, Chinese Univ of Hong Kong, Chinese Univ of Hong Kong, Chinese Univ. of Hong Kong
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Junyi Zhu
Physics, Chinese Univ of Hong Kong, Chinese Univ of Hong Kong, Chinese Univ. of Hong Kong
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Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si
ORAL
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Presenters
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Sandeep Kumar
Univ of California - Riverside
Authors
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Paul Lou
Univ of California - Riverside
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Sandeep Kumar
Univ of California - Riverside
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