Superconductivity in NbSe2 epitaxial thin films grown on sapphire substrates by molecular-beam epitaxy.

ORAL

Abstract

Transition metal dichalcogenides (TMDs) provide a rich variety of emerging properties at monolayer limit originating from broken inversion symmetry and large spin-orbit coupling as typified by valley-polarized luminescence and transport in semiconducting TMDs such as MoS2 and WSe2, unconventional superconductivity in NbSe2, enhancement of superconducting critical temperature in TaS2, topological phase transition in WTe2, and so on. The main fabrication methods of monolayer TMDs so far have been mechanical exfoliation and chemical-vapor deposition. The state-of-the-art molecular-beam epitaxy (MBE) should offer an alternative way to fabrication of TMD thin films and heterostructures, while so far conducting graphene substrates have been mainly used for spectroscopic studies. We have recently developed a fundamental route to layer-by-layer epitaxial growth of various TMD thin films on insulating sapphire substrates by MBE for transport studies [1], and demonstrated ambipolar transistor operation in WSe2 epitaxial thin films. In this presentation, we report on superconducting transition with zero-resistance in NbSe2 epitaxial thin films grown on sapphire substrates by MBE.
[1] M. Nakano et al., Nano Lett. 17, 5595 (2017).

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Presenters

  • Hideki Matsuoka

    Department of Applied Physics, The University of Tokyo, The University of Tokyo

Authors

  • Hideki Matsuoka

    Department of Applied Physics, The University of Tokyo, The University of Tokyo

  • Masaki Nakano

    Department of Applied Physics, The University of Tokyo, The University of Tokyo

  • Yue Wang

    Department of Applied Physics, The University of Tokyo, The University of Tokyo

  • Yuta Kashiwabara

    Department of Applied Physics, The University of Tokyo, The University of Tokyo

  • Satoshi Yoshida

    The University of Tokyo

  • Kyoko Ishizaka

    Applied Physics, Univ of Tokyo, The University of Tokyo

  • Masashi Kawasaki

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), the University of Tokyo, Univ of Tokyo, The University of Tokyo, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo, Applied Physics, University of Tokyo, Department of Applied Physics, The University of Tokyo, Department of Applied Physics, University of Tokyo

  • Yoshihiro Iwasa

    Univ of Tokyo, Department of Applied Physics, The University of Tokyo, The University of Tokyo, University of Tokyo, The Univ. of Tokyo, the University of Tokyo, the Univ. of Tokyo, Univ. of Tokyo