Devices from 2D Materials I - Electronics

FOCUS · K37

Presentations

  • High-performance MoS<sub>2</sub> Field Effect Transistors Gated by Polycrystalline Ferroelectric Pb(Zr,Ti)O<sub>3</sub>

    ORAL

    –

    Presenters

    • Jingfeng Song

      Department of Physics and Astronomy, University of Nebraska-Lincoln, Physics, Univ of Nebraska - Lincoln

    Authors

    • Jingfeng Song

      Department of Physics and Astronomy, University of Nebraska-Lincoln, Physics, Univ of Nebraska - Lincoln

    • Zhiyong Xiao

      Department of Physics and Astronomy, University of Nebraska-Lincoln

    • Seung-Hyun Kim

      School of Engineering, Brown University

    • Angus Kingon

      School of Engineering, Brown University

    • Xia Hong

      Department of Physics and Astronomy, University of Nebraska-Lincoln

    View abstract →

  • High Current Density and Low Contact Resistance <i>P</i>-type MoTe<sub>2</sub> Thin Flake FETs Enabled by Oxygen Plasma Doping

    ORAL

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    Presenters

    • Deshun Qu

      SKKU Advanced Institute of Nanotechnology, Sungkyunkwan Univ., SAINT, Sungkyunkwan Univ

    Authors

    • Deshun Qu

      SKKU Advanced Institute of Nanotechnology, Sungkyunkwan Univ., SAINT, Sungkyunkwan Univ

    • XIAOCHI LIU

      SAINT, Sungkyunkwan Univ

    • Won Jong Yoo

      SKKU Advanced Institute of Nanotechnology, Sungkyunkwan Univ., Sungkyunkwan Univ, SKKU Advaned Institute of Nano Technology, Sungkyunkwan University, SAINT, Sungkyunkwan Univ

    View abstract →

  • Electrical Transport Properties and Raman studies of few-layered Arsenic Doped Black Phosphorus Field-effect Transistor

    ORAL

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    Presenters

    • Nihar Pradhan

      National High Magnetic Field Lab; Jackson State University, Department of Physics, Jackson State University

    Authors

    • Nihar Pradhan

      National High Magnetic Field Lab; Jackson State University, Department of Physics, Jackson State University

    • Carlos Garcia

      Physics, Florida State University; National High Magnetic Field Lab, 1800 E. Paul Dirac Drive, National High Magnetic Field Laboratory, Natl High Magnetic Field Lab

    • Juan Martinez

      1800 E. Paul Dirac Drive, National High Magnetic Field Laboratory, Natl High Magnetic Field Lab

    • Srimanta Pakhira

      Department of Chemical & Biomedical Engineering, Florida State University

    • Jose Mendoza-Cortes

      Department of Chemical & Biomedical Engineering, Florida State University

    • Humberto Terrones

      Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Physics, Rensselaer Polytech Inst

    • Nikolai Zhigadlo

      Department of Chemistry and Biochemistry, University of Bern

    • Stephen McGill

      National High Magnetic Field Lab, NHMFL, Florida State University, 1800 E. Paul Dirac Drive, National High Magnetic Field Laboratory, Natl High Magnetic Field Lab, National High Magnetic Field Laboratory

    • Luis Balicas

      Natl High Magnetic Field Lab, Nat. High Magn. Field Lab., Florida State University, FSU-NHMFL, National High Magnetic Field Lab, National High Magnetic Field Laboratory, Natl. High Magnetic Field Lab, Florida State University, High Field Magnet Lab, 1800 E. Paul Dirac Drive, National High Magnetic Field Laboratory, Natl High Magnetic Field Lab

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  • Direct Observation of 2D Material Interfacial States within Devices Using STEM-EELS

    ORAL

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    Presenters

    • Ryan Wu

      Chemical Engineering and Material Science, University of Minnesota, Chemical Engineering and Materials Science, University of Minnesota

    Authors

    • Ryan Wu

      Chemical Engineering and Material Science, University of Minnesota, Chemical Engineering and Materials Science, University of Minnesota

    • Sagar Udyavara

      Chemical Engineering and Material Science, University of Minnesota

    • Rui Ma

      Electrical and Computer Engineering, University of Minnesota

    • Steven Koester

      University of Minnesota, Electrical and Computer Engineering, University of Minnesota

    • Matthew Neurock

      Chemical Engineering and Material Science, University of Minnesota

    • Andre Mkhoyan

      Chemical Engineering and Material Science, University of Minnesota, Chemical Engineering and Materials Science, University of Minnesota, Chemical Engineering and Materials Science, Univ of Minnesota - Twin Cities

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  • Electronics in Flatland

    Invited

    –

    Presenters

    • Sanjay Banerjee

      Electrical and Computer Engineering, University of Texas at Austin, Univ of Texas, Austin, The University of Texas at Austin

    Authors

    • Sanjay Banerjee

      Electrical and Computer Engineering, University of Texas at Austin, Univ of Texas, Austin, The University of Texas at Austin

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  • Controllable Oxidation for Making Ambipolar or P-type MoOx/MoS2 Transistors

    ORAL

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    Presenters

    • Wen-Bin Jian

      Dept Electrophys, Natl Chiao Tung Univ, Electrophysics, Natl Chiao Tung Univ

    Authors

    • Bang-Jia Jhang

      Dept Electrophys, Natl Chiao Tung Univ

    • Jian-Jhong Lai

      Dept Electrophys, Natl Chiao Tung Univ

    • Po-Sheng Wang

      Dept Electrophys, Natl Chiao Tung Univ

    • Bing-Shiuan Shie

      Dept Electrophys, Natl Chiao Tung Univ

    • Wen-Bin Jian

      Dept Electrophys, Natl Chiao Tung Univ, Electrophysics, Natl Chiao Tung Univ

    View abstract →

  • Reconfigurable Diodes Based on Vertical WSe<sub>2</sub> Transistors with van der Waals Bonded Contacts

    ORAL

    –

    Presenters

    • Dmitrii Unuchek

      EPFL, Ecole polytechnique fédérale de Lausanne

    Authors

    • Ahmet Avsar

      EPFL, École Polytechnique Federale de Lausanne

    • Dmitrii Unuchek

      EPFL, Ecole polytechnique fédérale de Lausanne

    • Kolyo Marinov

      Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne, EPFL

    • Enrique Gonzalez Marin

      Universita di Pisa

    • Giuseppe Iannaccone

      Universita di Pisa

    • Kenji Watanabe

      National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

    • Takashi Taniguchi

      National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

    • Gianluca Fiori

      Universita di Pisa

    • Andras Kis

      Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne, EPFL, Ecole polytechnique fédérale de Lausanne

    View abstract →

  • Improved On-Off Ratio in Black Phosphorus Field-Effect Transistors with True Ohmic Contacts

    ORAL

    –

    Presenters

    • Kraig Andrews

      Physics and Astronomy, Wayne State University

    Authors

    • Kraig Andrews

      Physics and Astronomy, Wayne State University

    • Arthur Bowman

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

    • Upendra Rijal

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

    • Michael Koehler

      Department of Materials Science and Engineering, The University of Tennessee, Materials Science and Engineering, The University of Tennessee, Department of Materials Science and Engineering, University of Tennessee

    • David Mandrus

      Department of Materials Science and Engineering, The University of Tennessee, Oak Ridge National Lab, Oak Ridge National Laboratory, Department of Materials Science and Engineering, University of Tennessee, University of Tennessee, Materials Science and Technology, Oak Ridge National Laboratory, Materials Science and Engineering, The University of Tennessee, Materials Science and Engineering, University of Tennessee, Material Science and Technology Division, Oak Ridge National Laboratory, Oakridge National Laboratory, University of Tennessee, Knoxville, Univ of Tennessee, Knoxville

    • Zhixian Zhou

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

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  • Pseudospintronics with Phosphorene Nanoribbons

    ORAL

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    Presenters

    • Sina Soleimanikahnoj

      Department of electrical and computer engineering, University of Wisconsin–Madison

    Authors

    • Sina Soleimanikahnoj

      Department of electrical and computer engineering, University of Wisconsin–Madison

    • Irena Knezevic

      Electrical and Computer Engineering, University of Wisconsin-Madison, University of Wisconsin-Madison, Department of electrical and computer engineering, University of Wisconsin–Madison

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  • High Mobility Palladium Diselenide (PdSe<sub>2</sub>) Field Effect Transistors Using heavily <i>n</i>-doped Graphene Contacts

    ORAL

    –

    Presenters

    • Arthur Bowman

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

    Authors

    • Arthur Bowman

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

    • Kraig Andrews

      Physics and Astronomy, Wayne State University

    • Upendra Rijal

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

    • Amanda Haglund

      University of Tennessee, Materials Science and Engineering, The University of Tennessee

    • David Mandrus

      Department of Materials Science and Engineering, The University of Tennessee, Oak Ridge National Lab, Oak Ridge National Laboratory, Department of Materials Science and Engineering, University of Tennessee, University of Tennessee, Materials Science and Technology, Oak Ridge National Laboratory, Materials Science and Engineering, The University of Tennessee, Materials Science and Engineering, University of Tennessee, Material Science and Technology Division, Oak Ridge National Laboratory, Oakridge National Laboratory, University of Tennessee, Knoxville, Univ of Tennessee, Knoxville

    • Zhixian Zhou

      Physics and Astronomy, Wayne State Univ, Physics and Astronomy, Wayne State University

    View abstract →

  • Persistent and Reversible Electrostatic Control of Doping in Graphene/BN Heterostructures

    ORAL

    –

    Presenters

    • Eberth Quezada

      Physics, Univ of California-Santa Cruz, Univ. of California-Santa Cruz

    Authors

    • Eberth Quezada

      Physics, Univ of California-Santa Cruz, Univ. of California-Santa Cruz

    • Frederic Joucken

      Physics, Univ of California-Santa Cruz

    • John Davenport

      Physics, Univ of California-Santa Cruz, Univ. of California-Santa Cruz

    • Hechin Chen

      Department of Physics, University of California-Santa Cruz, Physics, Univ of California-Santa Cruz

    • Alexandra Lara

      Physics, Univ of California-Santa Cruz

    • Takashi Taniguchi

      National Institute for Materials Science, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Chemical Engineering, Kyoto Univ, Advanced materials laboratory, National institute for Materials Science

    • Kenji Watanabe

      National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

    • Arthur Ramirez

      Physics, Univ of California-Santa Cruz, Univ. of California-Santa Cruz

    • Jairo Velasco Jr.

      Physics, Univ of California-Santa Cruz, University of California, Santa Cruz, Department of Physics, University of California-Santa Cruz, Univ. of California-Santa Cruz, Univ of California-Santa Cruz

    View abstract →