The Effect of Applied Strain on the Quasiparticle Band-Gap of Monolayer MoS2

ORAL

Abstract

Atomically thin materials such as single layer Molybdenum Disulfide (MoS2) have emerged as promising candidates for next generation flexible 2D electronics. However, few studies to date have investigated the electronic properties of these materials as a function of applied strain. In this work we use low temperature scanning tunneling microscopy and spectroscopy (STM/STS) to ellucidate the effect of strain on the quasiparticle band-gap of monolayer MoS2. Controlled strain was achieved by depositing single layer MoS2 on a flat substrate and then bending the substrate with a varying radius of curvature using a custom built sample holder.

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Presenters

  • Daniel Trainer

    Physics Department, Temple University

Authors

  • Daniel Trainer

    Physics Department, Temple University

  • Yuan Zhang

    Argonne National Laboratory, Center for Nanoscale Materials, Argonne National Laboratory

  • Fabrizio Bobba

    Physics Department, Salerno University, Physics, University of Salerno

  • Xiaoxing Xi

    Physics Department, Temple University, Physics, Temple University

  • Saw Hla

    Argonne National Laboratory, Physics & Astronomy, Ohio University, Argonne National Lab, Center for Nanoscale Materials, Argonne National Laboratory

  • Maria Iavarone

    Physics Department, Temple University, Physics, Temple University