A bottom up approach for producing highly effective electrical contacts to nanofin-based light emitting diodes

Semiconducting nanowires have been examined for many different applications including nanophotonics, optoelectronics, and on-chip light sources which can be integrated into semiconducting manufacturing. ZnO nanowires and nanofins are materials suitable for use in the construction of high quantum efficiency nanolasers. Presented here is a bottom up technique for producing scalable electrical contacts on highly controlled ZnO nanofins grown laterally across p-type GaN through VLS growth. This produces a heterojunction between ZnO and GaN which provides for ideal nanoscale light emitters within the semiconducting material. Growth conditions are optimized for tall nanofins with a straight epitaxial growth. Nanofin structures are ideal for the anisotropic depositions of insulative oxides and metal contacts designed for a highly efficient electrical injection into the ZnO sidewalls. We will present results on how the thickness of the profile of the nanofins impacts thickness of the oxide and ways it can be adjusted via controlling its angle of deposition and thickness via reactive ion etching. The developed methods enable interfacing a massive number of nano-LEDs with metal electrodes which can be incorporated into more complex device designs.