Dopants and Defects in Semiconductors - Complex Oxides and Oxide Interfaces

FOCUS · L11

Presentations

  • The effects of excess electrons in BiVO<sub>4</sub>

    ORAL

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    Presenters

    • Iflah Laraib

      Departament of Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, Univ of Delaware

    Authors

    • Iflah Laraib

      Departament of Materials Science and Engineering, University of Delaware, Department of Materials Science and Engineering, Univ of Delaware

    • Marciano Carneiro

      Department of Exact and Biological Sciences, Fluminense Federal University

    • Anderson Janotti

      Univ of Delaware, Department of Materials Science and Engineering, Univ of Delaware, University of Delaware, Departament of Materials Science and Engineering, University of Delaware, Department of Material science and Engineering, university of delaware, Department of Materials Science and Engineering, University of Delaware, Department of Materials Science & Engineering, University of Delaware

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  • Local structure about Er and Hf defects in LiNbO3: possibility of meta-stable distributions

    ORAL

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    Presenters

    • Frank Bridges

      Physics, Univ of California-Santa Cruz, Univ of California-Santa Cruz

    Authors

    • Frank Bridges

      Physics, Univ of California-Santa Cruz, Univ of California-Santa Cruz

    • Cameron MacKeen

      Physics, Univ of California-Santa Cruz, Univ of California-Santa Cruz

    • Laszlo Kovacs

      Wigner Research Center for Physics, Institute for Solid State Physics and Optics

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  • Boosting Small Polaron Hopping Mobility of Bismuth Vanadate by Doping from First-Principles Calculations

    ORAL

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    Presenters

    • Feng Wu

      Department of Chemistry and Biochemistry, University of California, Santa Cruz

    Authors

    • Feng Wu

      Department of Chemistry and Biochemistry, University of California, Santa Cruz

    • Wenrui Zhang

      Center for Functional Nanomaterials, Brookhaven National Laboratory

    • Mingzhao Liu

      Center for Functional Nanomaterials, Brookhaven National Laboratory

    • Yuan Ping

      Chemistry and Biochemistry, University of California, Santa Cruz, Department of Chemistry and Biochemistry, University of California, Santa Cruz, Department of Chemistry and Biochemistry, University of California Santa Cruz

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  • Reduced Spin-Phonon Coupling and Increased Hole Mobility of CuO by Li doping from First-principles Calculations

    ORAL

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    Presenters

    • Tyler Smart

      Physics, University of California, Santa Cruz

    Authors

    • Tyler Smart

      Physics, University of California, Santa Cruz

    • Allison Cardiel

      Chemistry, University of Wisconsin-Madison

    • Kyoung-Shin Choi

      Chemistry, University of Wisconsin-Madison

    • Yuan Ping

      Chemistry and Biochemistry, University of California, Santa Cruz, Department of Chemistry and Biochemistry, University of California, Santa Cruz, Department of Chemistry and Biochemistry, University of California Santa Cruz

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  • Charge Localization Near Acceptors in Transition-Metal Oxides

    ORAL

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    Presenters

    • Fernando Sabino

      Department of Material science and Engineering, university of delaware, Department of Materials Science and Engineering, University of Delaware

    Authors

    • Fernando Sabino

      Department of Material science and Engineering, university of delaware, Department of Materials Science and Engineering, University of Delaware

    • Anderson Janotti

      Univ of Delaware, Department of Materials Science and Engineering, Univ of Delaware, University of Delaware, Departament of Materials Science and Engineering, University of Delaware, Department of Material science and Engineering, university of delaware, Department of Materials Science and Engineering, University of Delaware, Department of Materials Science & Engineering, University of Delaware

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  • Ab initio study on the effectiveness of Mg-doping on improving conductivity in the transparent conducting oxides CuAlO<sub>2</sub>, AgAlO<sub>2</sub>, and CuCrO<sub>2</sub>

    ORAL

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    Presenters

    • James Shook

      Physics, Texas State Univ-San Marcos

    Authors

    • James Shook

      Physics, Texas State Univ-San Marcos

    • Pablo Borges

      Universidade Federal de Vicosa, Instituto de Ciencias Exatas e Tecnologia, Universidade Federal de Vicosa

    • Luisa Scolfaro

      Texas State University, Physics, Texas State Univ-San Marcos

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  • Improvements on the Diamond-V<sub>2</sub>O<sub>5</sub> 2DHG Electronic Structure using an Al<sub>2</sub>O<sub>3</sub> Passivation Layer

    ORAL

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    Presenters

    • Yichen Yao

      Arizona State Univ

    Authors

    • Yichen Yao

      Arizona State Univ

    • Yu Yang

      Arizona State University, Arizona State Univ

    • Xingye Wang

      Arizona State University, Arizona State Univ

    • Franz Koeck

      Arizona State University, Arizona State Univ

    • Robert Nemanich

      Arizona State Univ, Arizona State University

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  • Investigation of 3C-SiC/SiO<sub>2</sub> Interfacial Point Defects from <i>First Principles</i> Calculations and Electron Paramagnetic Resonance Measurements

    ORAL

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    Presenters

    • Taufik Adi Nugraha

      Max Planck Inst für Eisenforschung GmbH

    Authors

    • Taufik Adi Nugraha

      Max Planck Inst für Eisenforschung GmbH

    • Martin Rohrmüller

      University of Paderborn

    • Uwe Gerstmann

      University of Paderborn

    • Siegmund Greulich-Weber

      Solar Weaver GmbH

    • Jean-Louis Cantin

      Pierre and Marie Curie University

    • Jurgen von Bardeleben

      Pierre and Marie Curie University

    • Wolfgang Schmidt

      University of Paderborn

    • Stefan Wippermann

      Interface Chemistry and Surface Engineering, Max Planck Inst fuer Eisenforschung GmbH, Interface chemistry and surface engineering , Max Planck Inst fuer Eisenforschung GmbH, GO, Max-Planck-Institute Duesseldorf, Max Planck Inst für Eisenforschung GmbH

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  • Analytical Electron Microscopy of Antimony Doped 4H-SiC/SiO<sub>2</sub> and 4H-SiC/Boron and Phosphorus Doped SiO<sub>2</sub> Interface Structures in MOS Devices

    ORAL

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    Presenters

    • Christopher Klingshirn

      Materials Science and Engineering, University of Maryland

    Authors

    • Christopher Klingshirn

      Materials Science and Engineering, University of Maryland

    • Joshua Taillon

      Materials Science and Engineering, University of Maryland

    • Gang Liu

      Institute for Advanced Materials, Rutgers University

    • Sarit Dhar

      Department of Physics, Auburn University, Physics, Auburn University

    • Leonard Feldman

      Rutgers University, Institute for Advanced Materials, Rutgers University, Physics, Rutgers University

    • Tsvetanka Zheleva

      U.S. Army Research Laboratory

    • Aivars Lelis

      U.S. Army Research Laboratory, Army Research Lab

    • Lourdes Salamanca-Riba

      Materials Science and Engineering Department, Univ of Maryland-College Park, Materials Science and Engineering, University of Maryland

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