Type-II Dirac Line node in the anti-ReO3 class of materials.

Since the discovery of topological insulator (TI), the topology of electronic band structure has attracted much attention, leading to the discovery of diverse topological materials both in band insulating topological phases and semi-metal phases. In this talk, using first-principles calculations, we show type-II Dirac line node (DLN) can occur in anti-ReO3 class of materials under a mechanical strain. We then discuss the velocity-inversion conditions that classify Dirac line nodes into type-I and type-II, in a similar way to the classification of type-I and type-II Weyl semimetals.