Voltage Controlled Multi-bit Memory and Logic Operation in Manganite Nanostrips

POSTER

Abstract

Combining memory and logic functionality in one single device unit is highly attractive in developing next-generation nonvolatile devices. Manganites have been known to respond sensitively to electric field. Using this effect, we fabricate manganite strips with N pairs of side gates to control the total resistivity by side gate voltage. We demonstrate that the total resistivity of the manganite strips can have the 2N different levels by various gate voltage combinations. Logic operations can also be performed in such devices, which are promising for future computing systems beyond von Neumann architecture.

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Presenters

  • Qian Shi

    State Key Laboratory of Surface Physics and Department of Physics, Fudan University

Authors

  • Qian Shi

    State Key Laboratory of Surface Physics and Department of Physics, Fudan University

  • Yang Yu

    State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Department of Physics, Fudan University, Fudan Univ

  • Hanxuan Lin

    Fudan Univ, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Department of Physics, Fudan University

  • Tian Miao

    Fudan Univ, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Department of Physics, Fudan University

  • Peng Cai

    Fudan Univ., Fudan Univ, Tsinghua Univ, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Department of Physics, Fudan University

  • fengxian jiang

    School of Chemistry and Materials Science, Shanxi Normal University

  • Lifeng Yin

    Fudan Univ, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Department of Physics, Fudan University

  • Jian Shen

    Fudan Univ., Fudan Univ, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Department of Physics, Fudan University