Valley Polarization in Two-Dimensional Transition Metal Dichalcogenides Heterostructures with Ferromagnetic Semiconductor

ORAL

Abstract

Lifted valleys' degeneracy is a crucial precondition for manipulating valley degrees of freedom and storing information in future spintronics. It was revealed that the Zeeman valley splitting (~0.2 meV/T) could be obtained by applying an external magnetic field, however, this is considered as an inefficient approach. Magnetic proximity effect has been demonstrated to be an effective way to realize exchange interactions, especially in the form of two-dimensional (2D) van der Waals (vdW) heterostructures. We have explored electronic properties of 2D vdW heterostructures using first-principles calculations. It is found that valley splittings of 2 meV and 1.6 meV are achieved in WSe2/CrI3 and MoSe2/CrI3 heterostructures due to the coexistence of inversion symmetry and time-reversal symmetry breaking. These values correspond to an effective exchange field of ~10 and 8 T, respectively. We also observe that the magnitude of the valley splitting is sensitive to the stacking pattern of the heterostructures. Moreover, the valley splittings and polarization at K and K′ point are switchable through vertical flipping of the CrI3 magnetization.

Presenters

  • Tao Hu

    Department of Physics, Shanghai University

Authors

  • Tao Hu

    Department of Physics, Shanghai University

  • Guodong Zhao

    Department of Physics, Shanghai University

  • Yabei Wu

    Department of Physics, Shanghai University, Shanghai University, State Univ of New York at Buffalo

  • Wei Ren

    Shanghai Univ, Physics, Shanghai University, Department of Physics, Shanghai University, Department of Physics, International Center of Quantum and Molecular Structures, and Materials Genome Institute, Shanghai University, Shanghai University