Correlated 2D Fermion Systems as Interconnects in CMOS circuits

A major bottleneck in current CMOS technology is the parasitic capacitance associated to interconnects. Correlated two-dimensional fermion systems (2DFS) may be incorporated into interconnect structures or replace them as a whole. Specifically, such a system benefits from a quantum capacitance due to the exchange-correlation energies, which can take a negative value. Furthermore, such lines can overcome Ohmic limitations of cupper lines by usage of charge density waves propagation, e.g. plasmaron that would replace conventional charge transport mechanisms. Here we present devices with embedded 2DFS attained at AlGaAs/GaAs interfaces, which are specially fostered for to be highly correlated. First, we define the design criteria to achieve a negative capacitance value that may be used along with cupper lines in a CMOS circuit to reduce line coupling, and therefore increase the packing factor in transistor placements; second, we exhibit a device that uses a 2DFS as interconnect between two metal terminals. This device defies the limitations of charge transport through launching plasmarons (electron-plasmon coupling) as a means for signal transfer between contacts. These concept devices offer intriguing solutions to the interconnect problem in modern CMOS circuits.