Chemically Functionalized Two-dimensional Ferroelectrics: Combination of High-mobility Semiconductors and Non-volatile Memory

Ferroelectric semiconductors combining ferroelectricity with semiconductors remain elusive because most present-day ferroelectric materials are unsuitable for such a combination. Herein we show first-principles evidence towards the realization of a new class of 2D ferroelectric/multiferroic semiconductors that possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D chemical functionalized materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and non-destructive reading capability of non-volatile memory, thereby holding great potential for future multifunctional devices.
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