Properties of point defects in nano-porous SiC insulators

Point defect assisted leakage throughout nanoporous SiC insulators is important for integrated circuits. Using atomic models of nano-porous SiC, we explore the properties of the point defects using density functional calculations. We calculate H passivation energies, gap levels, and hyperfine parameters. The present results are combined with experimental and theroetical efforts to understand leakage in nano-porous SiC insulators.