Total Ionizing Dose Effects on the 1T-TaS2 Charge-Density-Wave Devices

ORAL

Abstract

The voltage controlled charge-density-wave (CDW) phase transition in quasi-2D 1T-TaS2 offers a possibility of using the switching behavior of these states for electronic applications. We have recently demonstrated a frequency tunable oscillator based on an integrated graphene–h-BN–TaS2 device that is capable of operating at room temperature [1]. In this work, we evaluate the total ionizing dose (TID) effect on 1T-TaS2 CDW devices by examining the current-voltage characteristics under X-ray irradiation at doses up to 1 Mrad(SiO2). We find that the threshold voltage, VTH, for the abrupt resistance change shifts by only ~2%, the resistance of the CDW states changes by less than ~2 % (low resistive state) and ~6.5 % (high resistive state), and the voltage oscillations function well after the full irradiation sequence [2]. We attributed the radiation hardness of these CDW devices to the high carrier concentration and absence of the gate dielectric in the structure. [1] G. Liu, et al., Nature Nanotechnology, 11, 845 (2016); [2] G. Liu, et al., IEEE Electron Device Letters (accepted, 2017) 10.1109/LED.2017.2763597.

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Presenters

  • Guanxiong Liu

    Electrical and computer Engineering, Univ of California - Riverside, Electrical and Computer Engineering, University of California, Riverside, University of California Riverside

Authors

  • Guanxiong Liu

    Electrical and computer Engineering, Univ of California - Riverside, Electrical and Computer Engineering, University of California, Riverside, University of California Riverside

  • Enxia Zhang

    Department of Electrical Engineering and Computer Science, Vanderbilt University

  • Chundong Liang

    Department of Electrical Engineering and Computer Science, Vanderbilt University

  • Mathew Bloodgood

    Chemsitry, University of Georgia, Department of Chemistry, University of Georgia

  • Tina Salguero

    Chemsitry, University of Georgia, Department of Chemistry, University of Georgia

  • Alexander Balandin

    Electrical and Computer Engineering , University of California, Electrical and Computer Engineering, University of California Riverside, Electrical and computer Engineering, Univ of California - Riverside, Department of Electrical and Computer Engineering/Materials Science and Engineering Program, University of California, Riverside, Department of Electrical and Computer Engineering, University of California, Riverside, Electrical and Computer Engineering, University of California, Riverside, University of California Riverside