Electronic Structure and Electrical Properties of Single Crystal Dinaphthothienothiophene (DNTT)

Dinaphthothienothiophene (DNTT), a thienoacene, has demonstrated carrier mobilities approaching 10 cm²/(V s) when integrated into a solid state device.¹ Thin-film DNTT-based field effect transistors are air-stable² and durable against accelerated temperatures and humidity conditions.³ While there are numerous device studies that establish DNTT and other related thienoacenes for a variety of applications, detailed electronic and chemical structure studies are much fewer. Here, electronic band structure measurements using a novel angle-resolved time-of-flight electron spectrometer are performed on single crystalline DNTT (SC-DNTT). Characterization is accomplished by both laboratory- and synchrotron-based photoemission spectroscopies with the assistance of a continuous wave blue laser source to increase the surface conductivity. Multiple highest occupied molecular orbitals are resolved of varying widths, and high-resolution x-ray photoelectron spectroscopy resolve the shake-up satellite features from the S 2p core electrons. Electrical measurements on SC-DNTT have also been performed, and will be presented.

1. W. Xie et al, Adv. Mater. 2013, 25, 3478
2. U. Zschieschang et al, Adv Mater 2010, 22, 982
3. N. K. Za’aba et al, Org. Electron. 2017, 45, 174