Vertical tunneling transport and nonlinear access resistance in layered single-crystal organic transistors
ORAL
Abstract
Organic semiconductors (OSCs) are the key materials for flexible printed electronics with the suitability for solution processes under ambient conditions. Recent studies revealed that high layered crystallinity of OSCs is quite essential for providing highly uniform crystalline films and high performance organic thin-film transistors (TFTs) [1]. In the materials, substitutions with normal alkyl chains is used to improve both solvent solubility and layered crystallinity. However, these alkyl chains should exhibit insulating nature due to the lack of pi electrons, which may affect the transport properties.
Here, we report that vertical transport across the alkyl-chain layers causes tunneling-based nonlinear access resistance in single-crystalline TFTs of Ph-BTBT-C10 [2]. The effect of access resistance appeared in layer-number (n)-dependent device mobility (2-20 cm2/Vs) and nonlinear Id-Vd characteristics (1 ≤ n ≤ 15). These characteristics were reproduced by numerical simulation with assuming the tunneling-based access resistance. Based on the results of low-temperature transport measurements, we discuss the vertical transport mechanism in the layered OSC crystals.
[1] S. Inoue, et al., Chem. Mater., 27, 3809 (2015). [2] T. Hamai et al., Phys. Rev. Appl., to be published.
Here, we report that vertical transport across the alkyl-chain layers causes tunneling-based nonlinear access resistance in single-crystalline TFTs of Ph-BTBT-C10 [2]. The effect of access resistance appeared in layer-number (n)-dependent device mobility (2-20 cm2/Vs) and nonlinear Id-Vd characteristics (1 ≤ n ≤ 15). These characteristics were reproduced by numerical simulation with assuming the tunneling-based access resistance. Based on the results of low-temperature transport measurements, we discuss the vertical transport mechanism in the layered OSC crystals.
[1] S. Inoue, et al., Chem. Mater., 27, 3809 (2015). [2] T. Hamai et al., Phys. Rev. Appl., to be published.
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Presenters
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Takamasa Hamai
Department of Applied Physics, University of Tokyo
Authors
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Takamasa Hamai
Department of Applied Physics, University of Tokyo
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Shunto Arai
Dept. of Applied Physics, Univ of Tokyo, The University of Tokyo, Department of Applied Physics, University of Tokyo
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Hiromi Minemawari
National Institute of Advanced industrial Science and Technology (AIST)
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Satoru Inoue
Nippon Kayaku Co., Ltd, Nippon Kayaku Co., Ltd.
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Tatsuo Hasegawa
Dept. of Applied Physics, Univ of Tokyo, The University of Tokyo, Department of Applied Physics, University of Tokyo