Conditional dispersive readout of a CMOS single-electron memory cell

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing to facilitate the integration process, improve feedback speeds and offer potential solutions to wiring and layout challenges. By using CMOS processes the processor can benefit from the most mature industrial technology for the fabrication of large scale circuits. In this talk I’d like to present the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor (FET) for control of the readout via gate-based dispersive sensing. A charge sensitivity of δq=95 μe/√Hz is obtained when the quantum dot readout is enabled by the control FET combined with a single-electron retention time of the order of one second when the FET is switched off, opening the path towards time-based multiplexing of gate-based radio-frequency readout in CMOS quantum devices.