Growth and Charaterization of templated InAs Nanowires

We have investigated InAs nanowires (NWs) grown epitaxially on horizontal templates with the goal of defect-free NWs for spintronics and quantum computation. We outline a proof-of-concept for this novel wire architecture including a gating scheme and a recipe for ohmic contacts based on sulfur passivation and angle evaporation. We present 2- and 4-wire measurements in magnetic fields at room temperature and down to 1.5 K. We obtain ~10 kOhm contact resistances and a linear scaling of wire resistance over lengths exceeding 10 um for bulk Si doping. Weak localization measurements with theory fits in the dirty-metal regime allow extraction of coherence and spin-orbit lengths as well as mean free path. Templated growth allows for scalable, top-down and on-demand placing and networking of NWs into 2D architectures as well as stacking of wires into parallel double or multiwire layouts, thus potentially providing a platform for Majorana fermions and parafermions¹ for topological qubits.

¹Klinovaja and Loss, PRB 90, 045118 (2014).