Selective Area Epitaxy of Semiconductor-Superconductor Nanowires

Semiconductor nanowires such as InAs and InSb are promising material for studying Majorana zero-modes and demonstrating non-abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. We take the hybrid InSb nanowire/superconductor platform a step further by demonstrating selective-area epitaxy of Al to InSb nanowires. Epitaxial InSb-Al devices generically demonstrate ballistic 1D superconductivity and a hard superconducting gap, requisites for engineering 1D topological superconductivity. Additionally, we investigate Majorana Islands based on epitaxial InSb-Al nanowires and the dependence of even-odd Coulomb oscillations as a function of island length and magnetic field.