Graphene Circular p-n Junction: from Optical Guiding to Quantum Dot Physics

ORAL

Abstract

The miniaturization limits on traditional semiconductor-electronics have led to proposals of an alternative platform based on the photon-like propagation of the Dirac-electrons in graphene. However, the chiral nature of these carriers and the associated Klein tunneling makes it difficult to control their motion electrostatically with standard gate voltages. We have devised a local dual-gate technique that produces a circular graphene p-n junction whose size can be continuously tuned from the nanometer-scale, where quantum effects are dominant, to the micrometer scale where optical-guiding takes over1. By varying the parameters of the junction we investigate the mechanism of gate controlled trapping, detrapping and guiding of electrons. Furthermore, applying an external magnetic field enables us to study the crossover from Landau quantization to quantum dot physics and electron lensing.
1Y. Jiang, et al, Tuning a Circular p-n Junction in Graphene from Quantum Confinement to Optical Guiding, Nature Nanotechnology (2017) doi:10.1038/nnano.2017.181

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Presenters

  • Jinhai Mao

    Department of Physics and Astronomy, Rutgers University, Physics, Rutgers, Physics and Astronomy, Rutgers University

Authors

  • Jinhai Mao

    Department of Physics and Astronomy, Rutgers University, Physics, Rutgers, Physics and Astronomy, Rutgers University

  • Yuhang Jiang

    Department of Physics and Astronomy, Rutgers University, Physics, Rutgers

  • Dean Moldovan

    Departement Fysica, Universiteit Antwerpen

  • Massoud Ramezani Masir

    Department of Physics, University of Texas at Austin, Physics, University of Texas at Austin

  • Guohong Li

    Department of Physics and Astronomy, Rutgers University, Physics and Astronomy, Rutgers Univ, Physics and Astronomy, Rutgers University

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

  • Takashi Taniguchi

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

  • François Peeters

    Departement Fysica, Universiteit Antwerpen, Department of Physics, University of Antwerp, University of Antwerp

  • Eva Andrei

    Department of Physics and Astronomy, Rutgers University, Physics and Astronomy, Rutgers Univ, Physics and Astronomy, Rutgers University, Department of Physics and Astronomy, Rutgers the State Univ of NJ New Brunswick