Boron nitride encapsulated structure as efficient heat dissipation for nano-electronics

Atomically thin two dimensional materials, such as graphene, moly-disulfide (MoS2) and hexagonal boron nitride (h-BN), attract increasing attention owing to their unique physical properties and applications. Fully h-BN encapsulated structure emerges as a novel platform with significant performance enhancement, owing to strong, in-plane bonding of the planar hexagonal lattice structure. Though significant efforts have been achieved in h-BN encapsulated 2D devices, thermal properties remain unexplored. In this work, we investigate lateral and interfacial thermal transport in fully h-BN encapsulated MoS2 devices, fabricated by the ultra-clean van der Waals method. Utilizing the refined optothermal Raman technique, the interfacial thermal conductance in BN/MoS2/BN interface is 60±27MW/m2K, which is significantly higher than MoS2/SiO2 structure. Lateral thermal conductivity of BN is 131±27W/mK. We also found the BN encapsulated MoS2 FET has significantly lower performance temperature than basic MoS2 FET. This demonstrates that the BN encapsulated structure offers a great heat dissipation for MoS2, opens new opportunities for studying thermal transport mechanism in 2D heterostructure devices and sheds light on engineering high-performance 2D FETs with low energy dissipation.