Ultrafast Carrier Dynamics in Nitride-based wide band gap semiconductors: Hexagonal Boron Nitride and Aluminum Nitride
ORAL
Abstract
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Presenters
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Ioannis Chatzakis
Electronics Science & Technology Division, ASEE/U.S. Naval Research Laboratory
Authors
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Ioannis Chatzakis
Electronics Science & Technology Division, ASEE/U.S. Naval Research Laboratory
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Roderick B. Davidson II
Chemistry Division, U.S. Naval Research Laboratory
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Adam Dunkelberger
Chemistry Division, U.S. Naval Research Laboratory, Chemistry Division, Naval Research Laboratory, Naval Research Lab
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Daniel Ratchford
Chemistry Division, U.S. Naval Research Laboratory
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Joshua Caldwell
Department of Mechanical Engineering, Vanderbilt University, Electrical and Mechanical Engineering, Vanderbilt
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Scott Katzer
Naval Research Laboratory, Electronics Science & Technology Division, US Naval Research Laboratory
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David Storm
Electronics Science & Technology Division, US Naval Research Laboratory
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Alexander Giles
Electronics Science & Technology Division, US Naval Research Laboratory
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Chase Ellis
Electronics Science & Technology Division, US Naval Research Laboratory
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Joseph Tischler
Electronics Science & Technology Division, US Naval Research Laboratory
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Jeffrey Owrutsky
Naval Research Lab, Chemistry Division, U.S. Naval Research Laboratory, Chemistry Division, Naval Research Laboratory, Chemistry Division, US Naval Research Laboratory