Internal strain distribution of PbZr_0.2Ti_0.8O₃/ZnO heterostructure

The piezoelectric response of epitaxial ZnO films and PbZr_0.2Ti_0.8O₃/ZnO heterostructure were studied by time-resolved x-ray diffraction (TRXRD). Epitaxial thin film samples were prepared by RF magnetron sputtering. ZnO was grown epitaxially on n-GaN/ Al₂O₃ (0001)-oriented substrates, and PbZr_0.2Ti_0.8O₃ thin film was deposited on top of ZnO. TRXRD revealed piezoelectric response in ZnO and PZT layers under an applied voltage. Piezoelectric properties were quantitatively analyzed by fitting the Laue oscillations of ZnO and PZT Bragg peaks. A non-uniform strain distribution model had to be used in order to explain experimental results. The results of this study improve the understanding of internal polarization dynamics and polarization coupling in semiconductor/ferroelectric heterostructures, and they provide new opportunities for controlling the electronic properties of semiconductors by switchable electric polarization of ferroelectric materials.

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