Novel Insight into Thermally Activated Absorption, Charge-Transfer and Polaron Relaxation in Molecular Semiconductors from Theory and Experiment
ORAL
Abstract
Charge transport in molecular materials is governed by strong electron-phonon coupling and polaronic effects. Such polaronic effects manifest in structural relaxation of molecules upon charging, which is quantified by the intramolecular relaxation energy. A similar structural relaxation occurs upon population of intermolecular charge-transfer (CT) states formed at organic electron donor−acceptor interfaces.
By comparing simulations and experiments, we show in this presentation that the line shape of the CT absorption bands is governed by temperature-activated intramolecular vibrations.[1] This allows us to extract values for the relaxation energy related to the geometry change from neutral to ionic CT complexes. Experimental values for the relaxation energies of 20 donor:C60 CT complexes correlate with values calculated within density functional theory. Still the residual deviations between experiment and simple models are even more interesting indicating the importance of a reduced relaxation energy, which we introduce to characterize thermally activated CT processes.
[1] K. Vandewal et al. J. Am. Chem. Soc. 139, 1699 (2017)
By comparing simulations and experiments, we show in this presentation that the line shape of the CT absorption bands is governed by temperature-activated intramolecular vibrations.[1] This allows us to extract values for the relaxation energy related to the geometry change from neutral to ionic CT complexes. Experimental values for the relaxation energies of 20 donor:C60 CT complexes correlate with values calculated within density functional theory. Still the residual deviations between experiment and simple models are even more interesting indicating the importance of a reduced relaxation energy, which we introduce to characterize thermally activated CT processes.
[1] K. Vandewal et al. J. Am. Chem. Soc. 139, 1699 (2017)
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Presenters
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Frank Ortmann
Tech Univ Dresden
Authors
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Frank Ortmann
Tech Univ Dresden
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Johannes Benduhn
Technische Universität Dresden, Tech Univ Dresden
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Karl Schellhammer
Technische Universität Dresden, Tech Univ Dresden
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Michel Panhans
Tech Univ Dresden
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Koen Vandewal
Technische Universität Dresden, Tech Univ Dresden