Device Criteria for Accurate Single Electron Pumping

ORAL

Abstract

Pumping electrons for both quantum information and metrological purposes is of great interest. Minimizing errors in moving electrons is very important for both fields. A variety of designs and operating modes for transferring electrons in these tunable barrier pumps has been pursued, utilizing one or more AC signals. Different operating modes have different demands on device performance, but there are some general rules to device design. Criteria such as gate-gate capacitance, gate-dot capacitance, barrier steepness, charging energy and temperature are the most important. Here we present results, using basic principles and experimental data, on designing and operating a tunable barrier CMOS charge pump. We will cover device requirements for low error charge pumping using a variety of modes, and present pumping results of a device operating in each of the presented modes.

Presenters

  • Roy Murray

    National Institute of Standards and Technology, NIST -Natl Inst of Stds & Tech

Authors

  • Roy Murray

    National Institute of Standards and Technology, NIST -Natl Inst of Stds & Tech

  • Justin Perron

    Physics, California State University San Marcos, Cal State Univ - San Marcos, Physics, Cal State Univ - San Marcos

  • M. Stewart Jr.

    NIST -Natl Inst of Stds & Tech, National Institute of Standards and Technology, National Institue of Standard and Technology

  • Neil Zimmerman

    National Institute of Standards and Technology, NIST -Natl Inst of Stds & Tech, National Institue of Standard and Technology