Gate-tunable Transmon Qubit made with Graphene/hBN Heterostructures

ORAL

Abstract

Graphene – an atomic layer of carbon atoms arranged in a honeycomb lattice – can acquire superconductivity via the proximity effect. We present the fabrication and characterization of a transmon qubit using graphene as a voltage-tunable weak link. The graphene monolayer is encapsulated in hBN crystals from both sides and couples to aluminum electrodes via etched 1-D edges to ensure highly transparent contacts. The critical supercurrent of the S-G-S junction is tuned by an underlying back-gate fabricated on the qubit chip. Using standard dispersive readout techniques, we observe that the frequency and coherence of our qubit exhibit an evident dependence on the Fermi energy – controlled by the back-gate – as expected for graphene weak links. Our result opens a new avenue toward voltage-controlled superconducting qubits, with relevance to certain scalable quantum computing concepts, as well as a novel platform to study mesoscopic physics using circuit QED techniques.

Presenters

  • Joel Wang

    Research Laborotary of Electronics, Massachusetts Institute of Technology

Authors

  • Joel Wang

    Research Laborotary of Electronics, Massachusetts Institute of Technology

  • Daniel Rodan Legrain

    Department of Physics, Massachusetts Institute of Technology

  • Landry Bretheau

    Department of Physics, Ecole Polytechnique

  • Fei Yan

    Research Laborotary of Electronics, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts institute of Technology

  • Morten Kjærgaard

    Research Laborotary of Electronics, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts Inst of Tech-MIT

  • David Kim

    MIT Lincoln Laboratory, MIT Lincoln Lab, Lincoln Laboratory, Massachusetts Institute of Technology, Massachusetts Inst of Tech-MIT, Lincoln Laboratory, Massachusetts Inst of Tech-MIT

  • Jonilyn Yoder

    MIT Lincoln Laboratory, MIT Lincoln Lab, Lincoln Laboratory, Massachusetts Institute of Technology, Massachusetts Inst of Tech-MIT, Lincoln Laboratory, Massachusetts Inst of Tech-MIT

  • Gabriel Samach

    Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Lab, MIT Lincoln Laboratory

  • Daniel Campbell

    Research Laborotary of Electronics, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts Institute of Technology

  • Philip Krantz

    Microtechnology and nanoscience, Chalmers University of Technology, Research Laborotary of Electronics, Massachusetts Institute of Technology, Massachusetts Inst of Tech-MIT, Research Laboratory of Electronics, Massachusetts Inst of Tech-MIT, Research Laboratory of Electronics, Massachusetts Institute of Technology

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

  • Takashi Taniguchi

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

  • Terry Orlando

    Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, MIT, Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts institute of Technology

  • Simon Gustavsson

    Massachusetts Institute of Technology, Research Laborotary of Electronics, Massachusetts Institute of Technology, Massachusetts Inst of Tech-MIT, Research Laboratory of Electronics, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts Inst of Tech-MIT, MIT, Research Laboratory of Electronics, Massachusetts institute of Technology

  • Pablo Jarillo-Herrero

    Massachusetts Inst of Tech-MIT, Department of Physics, Massachusetts Institute of Technology, Physics, MIT, MIT, Massachusetts Institute of Technology

  • William Oliver

    MIT Lincoln Laboratory, MIT Lincoln Lab, Massachusetts Institute of Technology & MIT Lincoln Laboratory, Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts Institute of Technology, Massachusetts Inst of Tech-MIT, Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts Inst of Tech-MIT, MIT, Lincoln Laboratory, Research Laboratory of Electronics, and Department of Physics, Massachusetts Institute of Technology, Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts institute of Technology