High-Yield Single-Step Catalytic Growth of Graphene Nanostripes by Plasma Enhanced Chemical Vapor Deposition
ORAL
Abstract
We report a single-step growth process of graphene nanostripes (GNSPs) by adding certain substituted aromatics as precursors during the PECVD. Without any active heating and by using low plasma power (≤ 60 W), we are able to grow GNSPs vertically with high yields up to (13 ± 4) g/m2 in 20 minutes. The morphology, electronic properties, width and yields of the GNSPs can be controlled by the growth parameters (e.g., the species of seeding molecules, compositions and flow rates of the gases, plasma power, and the growth time). Studies of the Raman spectra, SEM and TEM images, EDX, and electrical conductivity of these GNSPs as functions of the growth parameters confirm high-quality GNSPs with electrical mobility ~ 104 cm2/V-s. Together with the residual gas analyzer spectra and optical emission spectroscopy taken during PECVD growth, we propose a growth and branching mechanism of GNSPs. Our findings open up a pathway to inexpensive mass production of high-quality GNSPs for large-scale applications such as in supercapacitors and lithium-ion batteries.
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Presenters
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Chen-Chih Hsu
Physics, Caltech
Authors
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Chen-Chih Hsu
Physics, Caltech
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Jacob Bagley
Chemistry, Caltech
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Marcus Teague
Physics, Caltech, Physics, Califonia Institude of Technology
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Wei-Shiuan Tseng
Physics, Caltech, Caltech
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James Tour
Chemistry, Rice University
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Nai-Chang Yeh
Physics, Caltech, Physics, Califonia Institude of Technology, Caltech