High-Yield Single-Step Catalytic Growth of Graphene Nanostripes by Plasma Enhanced Chemical Vapor Deposition

ORAL

Abstract

We report a single-step growth process of graphene nanostripes (GNSPs) by adding certain substituted aromatics as precursors during the PECVD. Without any active heating and by using low plasma power (≤ 60 W), we are able to grow GNSPs vertically with high yields up to (13 ± 4) g/m2 in 20 minutes. The morphology, electronic properties, width and yields of the GNSPs can be controlled by the growth parameters (e.g., the species of seeding molecules, compositions and flow rates of the gases, plasma power, and the growth time). Studies of the Raman spectra, SEM and TEM images, EDX, and electrical conductivity of these GNSPs as functions of the growth parameters confirm high-quality GNSPs with electrical mobility ~ 104 cm2/V-s. Together with the residual gas analyzer spectra and optical emission spectroscopy taken during PECVD growth, we propose a growth and branching mechanism of GNSPs. Our findings open up a pathway to inexpensive mass production of high-quality GNSPs for large-scale applications such as in supercapacitors and lithium-ion batteries.

Presenters

  • Chen-Chih Hsu

    Physics, Caltech

Authors

  • Chen-Chih Hsu

    Physics, Caltech

  • Jacob Bagley

    Chemistry, Caltech

  • Marcus Teague

    Physics, Caltech, Physics, Califonia Institude of Technology

  • Wei-Shiuan Tseng

    Physics, Caltech, Caltech

  • James Tour

    Chemistry, Rice University

  • Nai-Chang Yeh

    Physics, Caltech, Physics, Califonia Institude of Technology, Caltech