Strain-Engineered Ultrhigh Mobility Phosphorene for Radio Frequency Transistor from First Principles

Two-dimensional phosphorene has been considered as a potential candidate for field-effect transistors due to its high hole mobility. Here we present a systematic ab-initio investigation of anisotropic electrical structure of few layer phosphorene under strains in both zigzag and armchair directions. Among these cases, the monolayer under 7.5~10% strain along zigzag direction shows an exceptional ~10⁶ cm²V^-1s^-1 carrier mobility, which is significantly higher than non-strain case. Along with the Silvaco simulation for designed field0effect transistor(FET) devices, our results suggest that phosphorene based FETs have potential application in radio frequency devices.