Nonlinear response of a ballistic graphene transistor with an ac-driven gate: high harmonic generation, THz detection, and non-adiabatic pumping

We present results for time-dependent electron transport in a ballistic graphene field-effect transistor with an ac-driven gate [1-4]. Nonlinear response to the ac drive is derived utilizing Floquet theory for scattering states in combination with Landauer-Buettiker theory for transport, current and noise. Inelastic scattering induced by the ac drive can excite quasibound states in the channel that leads to resonance promotion of higher-order sidebands. We propose that the device operated in the weak-drive regime can be used to detect THz radiation, while in the strong-drive regime, it can be used as a frequency multiplier. For a set-up with an asymmetric doping profile between source and drain, we explore resonant single-parameter pumping.

[1] Y. Korniyenko, O. Shevtsov, and T. Lofwander, Phys. Rev. B 93, 035435 (2016)
[2] Y. Korniyenko, O. Shevtsov, and T. Lofwander, Phys. Rev. B 94, 125445 (2016)
[3] Y. Korniyenko, O. Shevtsov, and T. Lofwander, Phys. Rev. B 95, 165420 (2017)
[4] Y. Korniyenko, O. Shevtsov, and T. Lofwander, arXiv:1705.05350