Field-effect transistors with parallel arrays of atomically precise graphene nanoribbons

Bottom-up synthesized graphene nanoribbons (GNRs) have promising properties for high-performance field-effect transistors (FETs). We have demonstrated FETs with individual, randomly oriented 9-atom wide GNRs that exhibit high on-current and on-off ratio. However, it is challenging to improve the device yield and to control the number of GNRs in the channel due to the random orientation of the GNRs. In order to demonstrate a practical FET for digital logic applications, the current of the FET must scale with electrode width and the device yield must be improved to 100%. Here, we demonstrate FETs with parallel arrays of GNRs grown on Au(788) crystals and transferred via a bubble transfer technique. We observe greatly improved device yield and compare the electrical characteristics of these devices to other devices incorporating dense, parallel arrays of 1-dimensional semiconductors.