Electric-Field-Induced Insulator to Metal Transition in α-MoO3

POSTER

Abstract

Layered α-MoO3 is well known for its intriguing optical and electrical properties based on two dimensional (2D) character. Here we show the reversible metallization and pronounced structural changes of MoO3 thin film by electrolyte gating. The resistivity of the gated thin film is tuned by five orders of magnitude at room temperature and a clear insulator-to-metal phase transition is observed accompanied by the change in out-of-plane lattice constant.

Presenters

  • Yuechen Zhuang

    Max Planck Institute of Microstructure Physics

Authors

  • Yuechen Zhuang

    Max Planck Institute of Microstructure Physics