A Multi- and few-layer graphene growth on Si(100) by pulsed laser deposition

A multi- and few-layer graphene were successfully prepared by pulsed laser exfoliation of highly ordered pyrolytic graphite (HOPG) using nanosecond Q-switched Nd:YAG laser. The effect of laser energy density, substrate temperatures, wavelength, and background pressures were investigated. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to analyze the topography and thickness of the films. AFM and SEM measurements showed that amorphous carbon, few-layer graphene and thin graphite films were formed as the laser power increased. Laser wavelength of 532 nm produced better quality films compared to 1064 nm pulses. Raman spectroscopy results confirmed the graphene film formation as well as the quality. Ongoing reflection high energy electron diffraction (RHEED) will also be presented. This study presents new insights to better understand the growth mechanism of graphene via laser exfoliation; an alternative, controllable, and efficient synthesis route.