Van der Waals proximity induced structural polymorphism in atomically thin MoS2.
POSTER
Abstract
Selective reversible structural switching of a crystal among its various polymorphs, is a fascinating problem in atomics scale crystal engineering. Atomically thin molybdenum disulphide (MoS2), which can exist in two main coordination, namely octahedral (1T) and trigonal prismatic (1H) structures, is being endorsed as building blocks of future technologies. While both 1H and 1T polymorphs exhibit a remarkable range of physical properties, stabilizing octahedral polymorphs has been challenging. We show that thermodynamically stable octahedral phase of monolayer MoS2 can be achieved at temperatures below ∼ 500 K using van der Waal epitaxy. At room temperature, ~ 10-15% of 2 × 1 1T’ octahedral phase, reversibly switchable to 1H by heating, is revealed by our temperature dependent Raman spectroscopy. Conducting-mode atomic force microscopy suggests that the octahedral phase forms a network of elongated (∼ 100 nm) patches/stripes within the 1H matrix. We attribute this, with support from density functional theory calculations, to local lattice relaxation due to incommensurability-driven stress fields. Our experiment establishes the van der Waals epitaxy as new tool for crystal structure engineering in atomic membranes.
Presenters
-
Tanweer Ahmed
Department of Physics, Indian Institute of Science
Authors
-
Tanweer Ahmed
Department of Physics, Indian Institute of Science
-
Mit H Naik
Department of Physics, Indian Institute of Science
-
Simran Kumari
Indian Institutes of Science Education and Research
-
Umesh V Waghmare
Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jawaharlal Nehru Center for Advanced Scientific Research
-
Manish Jain
Department of Physics, Indian Institute of Science
-
Arindam Ghosh
Physics, Indian Institute of Science, Department of Physics, Indian Institute of Science