Ferroelectrically driven nonvolatile memory by interfacing 2D semiconductors with ferroelectric thin films

Integration of 2D semiconductors with ferroelectrics can provide a route towards control of polarization switching by piezoelectric effect which allows the realization of exciting features of next-generation optoelectronic devices. The domains are written and read on the ferroelectric film using a piezoresponse force microscopy (PFM). We propose the use of typical Raman/PL imaging to predict the effect of phase change of ferroelectric on 2D materials. This mechanical writing not only controls the local surface charge but also tunes the electric fields into the channel arising from the polarization dipole. The two different ferroelectric polarization states with the stable current retention and fatigue characteristics make the present molecular ferroelectric based FET suitable for nonvolatile memory applications. The findings reveal that it is possible to obtain working of transistor with polar surfaces and possible to integrate 2D electronics with functional oxides.