Controlled Growth of Perovskite Single Crystal for High Mobility Field-Effect Transistors

The organolead halide perovskites have recently garnered tremendous research efforts in a broad range of photovoltaic and optoelectronic applications, despite of which a comprehensive physical picture of the intrinsic charge transport remains elusive and only rare example of perovskite field-effect transistors can be found.
In this work, we have achieved controlled growth of the perovskite single crystal for field-effect transistor applications and investigated the electrochemical mechanism behind electrode degradation of perovskite field-effect transistors. By chemical modification of electrodes, field-effect transistors exhibit clear p-type nature of charge transport in CH3NH3PbBr3 and highly hole carrier mobilities could further reach up to ~20cm2/Vs, which is also the highest values reported so far.